Micro light-emitting diode display
US11342377B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 29, 2020 |
| Grant date | May 24, 2022 |
| Priority date | — |
| Expiry date | Nov 29, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/857
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A micro light-emitting diode display, including at least one first type semiconductor base layer, a plurality of semiconductor light-emitting mesas, and a conducting layer, is provided. The plurality of semiconductor light-emitting mesas are dispersedly disposed on the at least one first type semiconductor base layer. The at least one first type semiconductor base layer has a surface exposed by the semiconductor light-emitting mesas. The conducting layer is disposed on the surface of the at least one first type semiconductor base layer and is in an interlaced distribution configuration with the semiconductor light-emitting mesas. The ratio of the area of the conducting layer in contact with the surface to the area of the surface is greater than or equal to 0.2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.