Thin film transistor and manufacturing method thereof, array substrate and display device
US11342431B2 · kind B2 · utility
0Cited by
9References
16Claims
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Key dates
| Filing date | Dec 18, 2019 |
| Grant date | May 24, 2022 |
| Priority date | — |
| Expiry date | Dec 18, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin film transistor and a manufacturing method thereof, an array substrate and a display device are provided. The thin film transistor is formed on a substrate and includes: an active layer on the substrate, the active layer including a source region, a drain region, and a channel region between the source region and the drain region; a first gate electrode on a side of the active layer away from the substrate; and a second gate electrode on a side of the first gate electrode away from the substrate, wherein a thickness of the first gate electrode is smaller than a thickness of the second gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.