Thin film transistor structure, array substrate and method for manufacturing a thin film transistor structure
US11342459B2 · kind B2 · utility
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16Claims
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Key dates
| Filing date | Jun 4, 2019 |
| Grant date | May 24, 2022 |
| Priority date | — |
| Expiry date | Oct 15, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
Abstract
The disclosure relates to a thin film transistor structure, an array substrate, and a method for manufacturing a thin film transistor structure. The thin-film transistor structure includes a base substrate, a thin film transistor on the base substrate. Wherein the thin film transistor includes an active layer and a source/drain electrode on a side, facing towards the base substrate, of the active layer. Wherein the source/drain electrode has a protrusion protruding from an edge portion of the active layer in a direction parallel to a surface of the base substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.