Thin film transistor, method for fabricating the same, array substrate, display panel and display device

US11342460B2 · kind B2 · utility

Assignees

• Ordos Yuansheng Optoelectronics Co., Ltd. · CN
• BOE Technology Group Co., Ltd. · CN

Inventors

• Zhixuan Guo · Beijing, CN
• Fengguo Wang · Beijing, CN
• Yezhou Fang · Beijing, CN
• Xinguo Wu · Beijing, CN
• Hong-Da Liu · Beijing, CN
• Kai Li · Beijing, CN
• Liang Tian · Baoding, CN
• Shiyu Zhang · Chengdu, CN

Key dates

• Filing date: Oct 15, 2019
• Grant date: May 24, 2022
• Expiry date: Jan 28, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6721

Abstract

A thin film transistor, a method for fabricating the same, an array substrate, a display panel, and a display device are provided. The thin film transistor includes a substrate, and an active layer on the substrate, wherein the active layer includes a poly-silicon layer and has a channel region and two electrode connection regions respectively on two sides of the channel region, and the channel region includes a plurality of lightly drain doping segments, which are spaced apart along from one of the electrode connection regions to the other electrode connection region, and channel segments located between the lightly drain doping segments.