Thin film transistor, method for producing same and display device
US11342461B2 · kind B2 · utility
0Cited by
5References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 7, 2018 |
| Grant date | May 24, 2022 |
| Priority date | — |
| Expiry date | Mar 7, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/12
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A TFT includes an oxide semiconductor layer including a conductive region electrically connected to a source electrode, a conductive region electrically connected to a drain electrode, a channel region being an oxide semiconductor region that overlaps a gate electrode, and at least one resistive region being an oxide semiconductor region provided between the channel region and a conductive region adjacent to the channel region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.