Schottky photodetector
US11342475B2 · kind B2 · utility
0Cited by
1References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 20, 2018 |
| Grant date | May 24, 2022 |
| Priority date | — |
| Expiry date | Sep 10, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/413
Abstract
An optoelectronic device, and a method of fabricating an optoelectronic device. The device comprising: a rib waveguide formed of doped silicon, said doped waveguide having a ridge portion, containing an uppermost surface and two sidewall surfaces; and a slab portion, adjacent to the two sidewall surfaces. The device further comprises: a metal contact layer, which directly abuts the uppermost surface and two sidewall surfaces, and which extends along a part of the slab portion so as to provide a Schottky barrier between the metal contact layer and the rib waveguide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.