Patent · US Active

III-nitride semiconductor devices

US11342477B2 · kind B2 · utility

0Cited by

1References

15Claims

0Family size

Assignee

HEXAGEM AB · SE

Inventors

Lars Samuelson · Malmö, SE
Jonas Ohlsson · Malmö, SE
Zhaoxia Bi · Lund, SE

Key dates

Filing date	Feb 13, 2017
Grant date	May 24, 2022
Priority date	—
Expiry date	May 24, 2039

Classification

Technology area (CPC H)Electricity
CPC primaryH10H20/032
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method of making a semiconductor device, comprising: forming a plurality of semiconductor seeds of a first III-nitride material through a mask provided over a substrate; growing a second III-nitride semiconductor material; planarizing the grown second semiconductor material to form a plurality of discrete base elements having a substantially planar upper surface. Preferably the step of planarizing involves performing atomic distribution of III type atoms of the grown second semiconductor material under heating to form the planar upper surface, and without supply of III type atoms is carried out during the step of planarization.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.