Light emitting diode chip and light emitting diode device
US11342488B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 5, 2019 |
| Grant date | May 24, 2022 |
| Priority date | — |
| Expiry date | Aug 5, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/831
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A light emitting diode chip including an epitaxy stacked layer, first and second electrodes and a first reflective layer is provided. The epitaxy stacked layer includes first-type and second-type semiconductor layers and a light-emitting layer. The first and second electrodes are respectively electrically connected to the first-type and second-type semiconductor layers. An orthogonal projection of the light-emitting layer on the first-type semiconductor layer is misaligned with an orthogonal projection of the first electrode on the first-type semiconductor layer. The first reflective layer is disposed on the epitaxy stacked layer, the first and second electrodes. An orthogonal projection of the first reflective layer on the second-type semiconductor layer is misaligned with an orthogonal projection of the second electrode on the second-type semiconductor layer. Furthermore, a light emitting diode device is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.