Magnetic memory devices for reducing electrical shorts between magnetic tunnel junction patterns
US11342495B2 · kind B2 · utility
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4References
20Claims
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Key dates
| Filing date | Feb 13, 2020 |
| Grant date | May 24, 2022 |
| Priority date | — |
| Expiry date | Jul 18, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/329
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Magnetic memory devices may include a substrate, a metal pattern extending in a first direction on the substrate, a magnetic tunnel junction pattern on the metal pattern, and an anti-oxidation layer between the metal pattern and the magnetic tunnel junction pattern. The magnetic tunnel junction pattern may include a first magnetic pattern, a tunnel barrier pattern, and a second magnetic pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.