Semiconductor device
US11346879B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 4, 2018 |
| Grant date | May 31, 2022 |
| Priority date | — |
| Expiry date | Feb 21, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/8384
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An increased accuracy in detecting deterioration of a semiconductor device can be achieved. A first metal pattern and a second metal pattern are connected to a controller. A bonding wire connects the first metal pattern and an emitter electrode. A linear conductor is connected between a first electrode pad and a second electrode pad. First bonding wires connect the first electrode pad and the second metal pattern. Second bonding wires connect the second electrode pad and the second metal pattern. The controller detects the deterioration of the semiconductor device when a potential difference between the first metal pattern and the second metal pattern is above a threshold.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.