Rubbing-induced site-selective growth of device patterns
US11348786B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 26, 2019 |
| Grant date | May 31, 2022 |
| Priority date | — |
| Expiry date | Dec 17, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/882
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The superior electronic and mechanical properties of 2D-layered transition metal dichalcogenides and other 2D layered materials could be exploited to make a broad range of devices with attractive functionalities. However, the nanofabrication of such layered-material-based devices still needs resist-based lithography and plasma etching processes for patterning layered materials into functional device features. Such patterning processes lead to unavoidable contaminations, to which the transport characteristics of atomically-thin layered materials are very sensitive. More seriously, such lithography-introduced contaminants cannot be safely eliminated by conventional material wafer cleaning approaches. This disclosure introduces a rubbing-induced site-selective growth method capable of directly generating few-layer molybdenum disulfide device patterns without the need of any additional patterning processes. This method consists of two critical steps: (i) a damage-free mechanical rubbing process for generating microscale triboelectric charge patterns on a dielectric surface, and (ii) site-selective deposition of molybdenum disulfide or the like within rubbing-induced charge patterns.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.