Method for producing a diode
US11348834B2 · kind B2 · utility
0Cited by
2References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 23, 2020 |
| Grant date | May 31, 2022 |
| Priority date | — |
| Expiry date | Jun 23, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/177
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A circuit includes at least one bipolar transistor and at least one variable capacitance diode. The circuit is fabricated using a method whereby the bipolar transistor and variable capacitance diode are jointly produced on a common substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.