Patent · US Active

Structures and method for growing diamond layers

US11348858B2 · kind B2 · utility

0Cited by

1References

18Claims

0Family size

Assignees

IMEC VZW · BE
Universiteit Hasselt · BE

Inventors

Paulius Pobedinskas · Boncelles, BE
Rajesh Ramaneti · Hasselt, BE
Ken Haenen · Hasselt, BE

Key dates

Filing date	Apr 21, 2020
Grant date	May 31, 2022
Priority date	—
Expiry date	Apr 21, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH01L23/481
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An intermediate structure for forming a semiconductor device and method of making is provided. The intermediate device includes (i) a substrate comprising a Ga-based layer, and (ii) optionally, a metal layer on the substrate; wherein at least one of the Ga-based layer and, if present, the metal layer comprises at least a surface region having an isoelectric point of less than 7, usually at most 6.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.