Semiconductor devices including bonding layer and adsorption layer
US11348892B2 · kind B2 · utility
0Cited by
13References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 21, 2020 |
| Grant date | May 31, 2022 |
| Priority date | — |
| Expiry date | Apr 21, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/811
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a first adsorption layer, a first bonding layer, a second bonding layer, and a second adsorption layer stacked on a first substrate, and a conductive pattern structure penetrating through the first adsorption layer, the first bonding layer, the second bonding layer and the second adsorption layer. The first and second bonding layers are in contact with each other, and each of the first and second adsorption layers includes a low-K dielectric material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.