Pixel structure for image sensors
US11348955B2 · kind B2 · utility
0Cited by
3References
51Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 4, 2019 |
| Grant date | May 31, 2022 |
| Priority date | — |
| Expiry date | Oct 16, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
Abstract
Disclosure herein relates to a unit pixel structure incorporating multiple photodiodes is disclosed. The unit pixel is formed in a semiconductive stack. The unit pixel includes a sensor well region, a floating diffusion region, a first gate structure and a second gate structure. The first gate structure is disposed over the semiconductive stack and the second gate structure extends into the semiconductive stack.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.