Image sensing device with grid structure and fabrication method thereof
US11348958B2 · kind B2 · utility
0Cited by
9References
20Claims
0Family size
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Key dates
| Filing date | May 16, 2019 |
| Grant date | May 31, 2022 |
| Priority date | — |
| Expiry date | May 16, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
Abstract
The present disclosure provides an optical structure, including a substrate, a light detection region in the substrate, an isolation structure in the substrate, surrounding the light detection region, a color filter layer over the substrate, and a dielectric grid structure in the color filter layer, the dielectric grid structure overlapping with the light detection region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.