Semiconductor device, manufacturing method thereof, and pressure transmitter using semiconductor device
US11349000B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 4, 2019 |
| Grant date | May 31, 2022 |
| Priority date | — |
| Expiry date | Sep 11, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/83
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An n type semiconductor layer is formed over an n type semiconductor substrate made of silicon carbide, a p type impurity region is formed in the semiconductor layer, and an n type drain region and an n type source region are formed in the impurity region. A field insulating film having an opening that selectively opens a part of the impurity region located between the drain and source regions is formed over the impurity region and the drain and source regions. A gate insulating film is formed over the impurity region in the opening, and a gate electrode is formed on the gate insulating film. Here, a field relaxation layer having an impurity concentration higher than that of the impurity region is formed in at least a part of the impurity region located between the drain and source regions in plan view and located below the field insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.