High power radio frequency switches with low leakage current and low insertion loss
US11349469B2 · kind B2 · utility
1Cited by
5References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 23, 2020 |
| Grant date | May 31, 2022 |
| Priority date | — |
| Expiry date | Dec 23, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2217/0054
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
High power radio frequency (RF) switches with low leakage current and low insertion loss are provided. In one embodiment, an RF switch includes a plurality of terminals including an antenna terminal, a receive terminal, and a transmit terminal. The RF switch also includes a plurality of transistors that are controllable to set the RF switch in a first mode or a second mode, and an inductor electrically connected between the antenna terminal and the receive terminal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.