Patent · US Active

Plasma source and surface treatment method

US11352696B2 · kind B2 · utility

3Cited by
3References
15Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 25, 2015
Grant dateJun 7, 2022
Priority date
Expiry dateJun 25, 2035

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J2237/332
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

A plasma source has an outer surface, interrupted by an aperture for delivering an atmospheric plasma from the outer surface. A transport mechanism transports a substrate in parallel with the outer surface, closely to the outer surface, so that gas from the atmospheric plasma may form a gas bearing between the outer surface the and the substrate. A first electrode of the plasma source has a first and second surface extending from an edge of the first electrode that runs along the aperture. The first surface defines the outer surface on a first side of the aperture. The distance between the first and second surface increasing with distance from the edge. A second electrode covered at least partly by a dielectric layer is provided with the dielectric layer facing the second surface of the first electrode, substantially in parallel with the second surface of the first electrode, leaving a plasma initiation space on said first side of the aperture, between the surface of the dielectric layer and the second surface of the first electrode. A gas inlet feeds into the plasma initiation space to provide gas flow from the gas inlet to the aperture through the plasma initiation space. Atmosph…

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.