Structure and joined composite
US11355416B2 · kind B2 · utility
0Cited by
2References
8Claims
0Family size
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Key dates
| Filing date | Aug 31, 2020 |
| Grant date | Jun 7, 2022 |
| Priority date | — |
| Expiry date | Dec 25, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/36
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A structure includes: a β silicon nitride crystal phase; and a Y2MgSi2O5N crystal phase. The structure gives a X-ray diffraction pattern by a θ-2θ method, the pattern having a ratio of a peak intensity of a (22-1) plane of the Y2MgSi2O5N crystal phase to a peak intensity of a (200) plane of the β silicon nitride crystal phase, the peak intensity of the (200) plane being determined at a position of 2θ=27.0±1°, the peak intensity of the (22-1) plane being determined at a position of 2θ=30.3±1°, and the ratio being 0.001 or more and 0.01 or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.