Method for making aluminum nitride wafer and aluminum nitride wafer made by the same
US11355448B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 7, 2020 |
| Grant date | Jun 7, 2022 |
| Priority date | — |
| Expiry date | Sep 23, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2223/54493
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides an aluminum nitride wafer and a method for making the same. The method includes forming at least one alignment notch in or at least one flat alignment edge on a periphery of the aluminum nitride wafer. The alignment notch and the flat alignment edge can prevent the aluminum nitride wafer from being in a poor state during the semiconductor manufacturing process and makes it possible to position the aluminum nitride wafer precisely so that the fraction defective can be lowered. The aluminum nitride wafer of the present invention has advantages of effective insulation, efficient heat dissipation, and a high dielectric constant, and can be used in semiconductor manufacturing processes, electronic products, and semiconductor equipment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.