Patent · US Active

Semiconductor devices including thick pad

US11355467B2 · kind B2 · utility

1Cited by
1References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 3, 2020
Grant dateJun 7, 2022
Priority date
Expiry dateAug 3, 2040

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/15311
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor device may include a semiconductor chip in an encapsulant. A first insulation layer may be disposed on the encapsulant and the semiconductor chip. A horizontal wiring and a primary pad may be disposed on the first insulation layer. A secondary pad may be disposed on the primary pad. A second insulation layer covering the horizontal wiring may be disposed on the first insulation layer. A solder ball may be disposed on the primary pad and the secondary pad. The primary pad may have substantially the same thickness as a thickness of the horizontal wiring.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.