Micro light emitting diode display panel, method for fabricating same, and display device
US11355478B2 · kind B2 · utility
Inventors
Key dates
| Filing date | Jul 18, 2019 |
| Grant date | Jun 7, 2022 |
| Priority date | — |
| Expiry date | May 13, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/855
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides a micro light emitting diode display panel, a method for fabricating the same, and a display device comprising the same. The micro light emitting diode display panel includes an active layer, a gate insulating layer, a gate electrode, a source electrode, a drain electrode, a pixel electrode, a micro light emitting diode, and a gate insulating layer covering the active layer, the gate insulating layer, the gate electrode, the source electrode, and the drain electrode. The light shielding layer blocks light emitted by the micro light emitting diode from being incident on the thin film transistor, thereby reducing influence of the light emitted by the micro light emitting diode light on the thin film transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.