Patent · US Active

Electronic chip memory

US11355503B2 · kind B2 · utility

0Cited by
4References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 10, 2019
Grant dateJun 7, 2022
Priority date
Expiry dateMar 8, 2040

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D89/10
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A device includes at least three memory cells. For each cell, there is a first doped semiconductor area and a switch coupling the cell to the first area. First doped semiconductor zones connect the first areas together. A memory can include a number of the devices. For example, the cells can be arranged in a matrix, each device defining a row of the matrix.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.