Thin film transistor, method for preparing the same, display substrate and display device
US11355614B2 · kind B2 · utility
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17Claims
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Key dates
| Filing date | Oct 17, 2018 |
| Grant date | Jun 7, 2022 |
| Priority date | — |
| Expiry date | Oct 17, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides a thin film transistor, a method for preparing the same, a display substrate, and a display device. The thin film transistor includes a gate electrode, a semiconductor layer, and a gate insulation layer arranged between the gate electrode and the semiconductor layer, and the gate insulation layer includes a metal oxide layer and a modified layer formed through self-assembling on a side of the metal oxide layer away from the gate electrode and.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.