Silicon carbide semiconductor device and power converter
US11355627B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 23, 2018 |
| Grant date | Jun 7, 2022 |
| Priority date | — |
| Expiry date | May 18, 2039 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02B70/10
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In SiC-MOSFETs including Schottky diodes, passage of a bipolar current to a well region in a terminal region cannot be sufficiently reduced, which may reduce the reliability of elements. A SiC-MOSFET including Schottky diodes includes a gate electrode formed, through a second insulating film thicker than a gate insulating film in an active region, on a separation region between a first well region in the active region that is the closest to the terminal region and a second well region in the terminal region, wherein the second well region has a non-ohmic connection to a source electrode. Thus, a decrease in the reliability of elements is prevented.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.