Semiconductor device and power converter
US11355629B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 7, 2017 |
| Grant date | Jun 7, 2022 |
| Priority date | — |
| Expiry date | Aug 18, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A silicon carbide semiconductor device includes a diffusion protective layer provided below a gate insulating film, a gate line provided on an insulation film on the bottom face of a terminal trench and electrically connected to a gate electrode, the terminal trench being located more toward the outer side than the gate trench, a gate pad joined to the gate line in the terminal trench, a terminal protective layer provided below the insulation film on the bottom face of the terminal trench, and a source electrode electrically connected to a source region, the diffusion protective layer, and the terminal protective layer. The diffusion protective layer has first extensions that extend toward the terminal protective layer and that are separated from the terminal protective layer. This configuration inhibits an excessive electric field from being applied to the gate insulating film provided on the bottom face of the gate trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.