Superconducting qubit devices based on metal silicides
US11355690B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 6, 2020 |
| Grant date | Jun 7, 2022 |
| Priority date | — |
| Expiry date | Dec 8, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N60/805
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A qubit device for use in a quantum computing environment includes a semiconductor substrate, an insulating layer disposed on at least a portion of an upper surface of the substrate, and a transition metal silicide (TMSi) heterojunction disposed on at least a portion of an upper surface of the insulating layer. The TMSi heterojunction includes a link layer and at least first and second TMSi regions coupled with the link layer. The link layer may include a normal conductor, thereby forming a superconductor-normal conductor-superconductor (SNS) junction, or a geometric constriction, thereby forming a superconductor-geometric constriction-superconductor (ScS) junction. The link layer may form at least a portion of a channel including intrinsic or doped silicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.