Molded interconnect device
US11357112B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 5, 2017 |
| Grant date | Jun 7, 2022 |
| Priority date | — |
| Expiry date | Jul 7, 2038 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/5193
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
In some embodiments, a manufacturing process includes injection molding a palladium-catalyzed material into a substrate, forming a thin copper film over exterior and exposed surfaces of the substrate; ablating or removing copper film from the substrate to provide first, second and optional third portions of the copper film and ablated sections; electrolytically plating each portion to form metallic-plated portions; and ablating or removing the second portion in order to isolate the first portion. The metallic-plated first portion comprises a circuit portion of a molded interconnect device (MID), and where the metallic-plated third portion comprises a Faraday cage portion of a MID. A soft etching step may be included. A solder resist application step can be added, along with an associated solder resist removal step.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.