Patent · US Active

Manufacturing method of indium tin oxide

US11359299B2 · kind B2 · utility

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10Claims
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Assignee

Inventors

Key dates

Filing dateSep 17, 2021
Grant dateJun 14, 2022
Priority date
Expiry dateSep 17, 2041

Classification

  • Technology area (CPC C)Chemistry; Metallurgy
  • CPC primaryC25D5/10
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

The present disclosure provides a manufacturing method of indium tin oxide, including: providing a first electrolyte including choline chloride, urea, indium chloride, boric acid, and ascorbic acid; disposing a workpiece, wherein at least a part of the workpiece is in contact with the first electrolyte; heating the first electrolyte to 60° C.-95° C.; applying a first operating current to electroplate indium onto the workpiece; providing an second electrolyte including choline chloride, urea, tin chloride, boric acid, and ascorbic acid; disposing the indium-coated workpiece, wherein at least a part of the workpiece is in contact with the second electroplate; heating the second electroplate to 60° C.-95° C.; applying a second operating current to electroplate tin onto the workpiece; and annealing the indium and tin on the workpiece to form indium tin oxide in an oxygen environment.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.