Fabricating a silicon carbide and nitride structures on a carrier substrate
US11361964B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 14, 2020 |
| Grant date | Jun 14, 2022 |
| Priority date | — |
| Expiry date | Jun 17, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3063
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method, apparatus, and system for forming a semiconductor structure. A first oxide layer located on a set of group III nitride layers formed on a silicon carbide substrate is bonded to a second oxide layer located on a carrier substrate to form an oxide layer located between the carrier substrate and the set of group III nitride layers. The silicon carbide substrate has a doped layer. The silicon carbide substrate having the doped layer is etched using a photo-electrochemical etching process, wherein a doping level of the doped layer is such that the doped layer is removed and a silicon carbide layer in the silicon carbide substrate remains unetched. The semiconductor structure is formed using the silicon carbide layer and the set of group III nitride layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.