Method of manufacturing semiconductor device
US11361966B2 · kind B2 · utility
0Cited by
2References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 27, 2020 |
| Grant date | Jun 14, 2022 |
| Priority date | — |
| Expiry date | Dec 20, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/27
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a method of manufacturing a semiconductor device includes forming a first film on a substrate. The method further includes forming a second film on the first film. The second film includes fluoride of a first metal element having a first boiling point of 800° C. or higher and fluoride of a second metal element having a second boiling point of 800° C. or higher. The second metal element is different from the first metal element. The method further includes etching the first film using the second film as an etching mask and etching gas that includes fluorine.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.