Semiconductor device
US11362012B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 15, 2020 |
| Grant date | Jun 14, 2022 |
| Priority date | — |
| Expiry date | Oct 15, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a semiconductor device, a first protection film covers an end portion of a first metal layer disposed on a semiconductor substrate, and has a first opening above the first metal layer. A second metal layer is disposed on the first metal layer in the first opening. An oxidation inhibition layer is disposed on the second metal layer in the first opening. A second protection film has a second opening and covers an end portion of the oxidation inhibition layer and the first protection film. The second protection film has an opening peripheral portion on a periphery of the second opening, and covers the end portion of the oxidation inhibition layer. An adhesion portion adheres to a portion of a lower surface of the opening peripheral portion. The adhesion portion has a higher adhesive strength with the second protection film than the oxidation inhibition layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.