Semiconductor device
US11362032B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 2, 2020 |
| Grant date | Jun 14, 2022 |
| Priority date | — |
| Expiry date | Nov 6, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/966
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a first gate electrode disposed on a substrate and extending in a first horizontal direction, a first gate contact and a dummy gate contact, which are spaced apart from each other in the first horizontal direction and are in contact with a top surface of the first gate electrode, a first interconnect line extending in a second horizontal direction and overlapping the first gate contact in a vertical direction with respect to the upper surface of the substrate, and a voltage generator configured to generate a first voltage and apply the first voltage to the first gate electrode via the first interconnect line and the first gate contact. The first gate electrode receives the first voltage via the first interconnect line and the first gate contact from the voltage generator. The dummy gate contact receives the first voltage via the first gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.