RF substrate with junctions having an improved layout
US11362051B2 · kind B2 · utility
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17Claims
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Key dates
| Filing date | Mar 12, 2021 |
| Grant date | Jun 14, 2022 |
| Priority date | — |
| Expiry date | Mar 12, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/20
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Making a semiconductor-on-insulator substrate provided with an eddy current blocking structure (20) formed in a segment (22) doped according to doping of a first type, of doped regions (23) periodically distributed on one or more parallel rows and according to a pattern (M2) and an improved arrangement.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.