Methods of manufacturing semiconductor devices
US11362067B2 · kind B2 · utility
2Cited by
10References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 22, 2020 |
| Grant date | Jun 14, 2022 |
| Priority date | — |
| Expiry date | Apr 29, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2225/06568
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device according to example embodiments includes: sequentially forming first through third insulating layers on a substrate; forming an opening by etching the first through third insulating layers; forming a conductive layer configured in the opening; forming a fourth insulating layer in the opening after the forming of the conductive layer; and removing a portion of an edge region of the substrate after the forming of the fourth insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.