Patent · US Active

Method for the production of a semi-transparent display, and a semi-transparent display

US11362164B2 · kind B2 · utility

1Cited by
1References
12Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 11, 2018
Grant dateJun 14, 2022
Priority date
Expiry dateDec 11, 2038

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10K59/82

Abstract

Provided is a semi-transparent display and a method for producing a semi-transparent display. An SOI wafer is provided, the surface having at least one pixel region and at least one contact region arranged next to the pixel region, the SOI wafer comprising a silicon substrate on the rear side. At least one electromagnetic-radiation-emitting layer is deposited on the front side of the SOI wafer. At least one transparent cover layer is applied above the at least one electromagnetic-radiation-emitting layer. A wiring carrier is fastened to the assembly comprising the SOI wafer, the electromagnetic-radiation-emitting layer and the transparent cover layer. Before fastening of the wiring carrier to the assembly, the silicon substrate is removed from the assembly, producing a residual assembly, and electrically conductive connections are formed between the contact region of the SOI wafer and the wiring carrier from the rear side of the SOI wafer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.