Semiconductor device and a method for forming a semiconductor device
US11362195B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 20, 2019 |
| Grant date | Jun 14, 2022 |
| Priority date | — |
| Expiry date | Jun 18, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/911
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A semiconductor device and a method for forming such are provided, the device including: a substrate, a plurality of parallel active semiconductor patterns that extend through a drain-side region and a source-side region, a metal drain contact in the drain-side region, an active gate pattern, a first dummy gate pattern, and a second dummy gate pattern that all extend across the active semiconductor patterns, and a metal interconnect structure located in a region between the first and the second dummy gate patterns. The active semiconductor patterns are doped with a dopant in portions exposed by the dummy gates in dummy gate regions that include the gate cut regions of the first and second dummy gate patterns. The metal interconnect structure connects each of a second subset of the active semiconductor patterns to a respective at least one of a first subset of the active semiconductor patterns.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.