Group III nitride enhancement-mode HEMT based on composite barrier layer structure and manufacturing method thereof

US11362205B2 · kind B2 · utility

Assignee

• SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS (SINANO) , CHINESE ACADEMY OF SCIENCES · CN

Inventors

• Qian Sun · Nanhu, CN
• Yu Ting Zhou · Suzhou, CN
• Yaozong ZHONG · Suzhou, CN
• Hongwei Gao · Beijing, CN
• Meixin Feng · Suzhou, CN
• Hui Yang · Singapore, SG

Key dates

• Filing date: Apr 10, 2018
• Grant date: Jun 14, 2022
• Expiry date: Apr 10, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/256

Abstract

A group III nitride enhancement-mode HEMT based on a composite barrier layer structure and a manufacturing method thereof are provided. The HEMT includes first and second semiconductors respectively serving as a channel layer and a barrier layer, a third semiconductor serving as a p-type layer, a source, a drain and a gate, wherein a recessed structure is formed in the region of the barrier layer corresponding to the gate, which is matched with the third semiconductor and the gate to form a p-type gate, and the second semiconductor includes first and second structure layers successively arranged on the first semiconductor; relative to the selected etching reagent, the first structure layer has higher etching resistance than the second structure layer.