Local metallization for semiconductor substrates using a laser beam
US11362220B2 · kind B2 · utility
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6Claims
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Key dates
| Filing date | Apr 5, 2019 |
| Grant date | Jun 14, 2022 |
| Priority date | — |
| Expiry date | Apr 5, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F71/1375
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
Local metallization of semiconductor substrates using a laser beam, and the resulting structures, e.g., micro-electronic devices, semiconductor substrates and/or solar cells, are described. For example, a solar cell includes a substrate and a plurality of semiconductor regions disposed in or above the substrate. A plurality of conductive contact structures is electrically connected to the plurality of semiconductor regions. Each conductive contact structure includes a locally deposited metal portion disposed in contact with a corresponding a semiconductor region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.