Doped passivated contacts
US11362221B2 · kind B2 · utility
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7Claims
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Key dates
| Filing date | Feb 6, 2018 |
| Grant date | Jun 14, 2022 |
| Priority date | — |
| Expiry date | Feb 6, 2038 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
PolySi:Ga/SiO2 passivated contacts were prepared using ion implantation and dopant inks to introduce Ga into a-Si. Following crystallization anneals these p-type contacts exhibited improved passivation (iVoc of about 730 mV) over B-doped passivated contacts for solar cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.