Local patterning and metallization of semiconductor structures using a laser beam
US11362234B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 5, 2019 |
| Grant date | Jun 14, 2022 |
| Priority date | — |
| Expiry date | Apr 5, 2039 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
Local patterning and metallization of semiconductor structures using a laser beam, e.g., micro-electronic devices, semiconductor substrates and/or solar cells, are described. For example, a method of fabricating a solar cell includes providing a substrate having an intervening layer thereon. The method also includes locating a metal foil over the intervening layer. The method also includes exposing the metal foil to a laser beam, wherein exposing the metal foil to the laser beam forms openings in the intervening layer and forms a plurality of conductive contact structures electrically connected to portions of the substrate exposed by the openings.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.