Patent · US Active

Quantum dot and manufacturing method for the same and application using the same

US11362236B2 · kind B2 · utility

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20Claims
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Key dates

Filing dateNov 12, 2019
Grant dateJun 14, 2022
Priority date
Expiry dateJun 24, 2040

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/0361
  • WIPO fieldMicro-structural and nano-technology
  • WIPO sectorChemistry

Abstract

The present disclosure provides a quantum dot and a manufacturing method for the same, and a luminescent material, a light-emitting element and a display device applying the quantum dot. The quantum dot includes a core and a shell layer. The core is at least one selected from the group consisting of a XII-XV group compound semiconductor nano-crystal, a XII-XVI group compound semiconductor nano-crystal, a XIII-XV group compound semiconductor nano-crystal and a XIII-XVI group compound semiconductor nano-crystal. The core contains a cadmium element and a selenium element. The shell layer contains a zinc element and a sulfur element. The shell layer encloses the core.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.