Semiconductor device, method of fabricating the same, and display device including the same
US11362247B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 8, 2020 |
| Grant date | Jun 14, 2022 |
| Priority date | — |
| Expiry date | Apr 8, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0364
Abstract
A semiconductor device includes a substrate including a first region and a second region that are arranged in a first direction that is parallel to an upper surface of the substrate; a separation layer provided on the first region of the substrate; a high electron mobility transistor (HEMT) device overlapping the separation layer in a second direction that is perpendicular to the upper surface of the substrate; a light-emitting device provided on the second region of the substrate; and a first insulating pattern covering a side surface of the HEMT device, wherein the first insulating pattern overlaps the separation layer in the second direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.