Heat flow switching element
US11362255B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Mar 26, 2020 |
| Grant date | Jun 14, 2022 |
| Priority date | — |
| Expiry date | May 21, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N10/82
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a heat flow switching element which has a larger change in a thermal conductivity and has excellent thermal responsiveness. The heat flow switching element includes an N-type semiconductor layer, an insulator layer laminated on the N-type semiconductor layer, a P-type semiconductor layer laminated on the insulator layer, an N-side electrode connected to the N-type semiconductor layer, and a P-side electrode connected to the P-type semiconductor layer. In particular, the insulator layer is formed of a dielectric. Also, a plurality of N-type semiconductor layers and P-type semiconductor layers are laminated alternately with the insulator layer interposed therebetween.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.