Acoustic wave device, multiplexer, and communication apparatus
US11362639B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 27, 2018 |
| Grant date | Jun 14, 2022 |
| Priority date | — |
| Expiry date | Apr 5, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04B1/0057
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An acoustic wave device includes a substrate 3, a multilayer film 5 on the substrate 3, an LT layer 7 which is located on the multilayer film and is configured by a single crystal of LiTaO3, and an IDT electrode 19 on the LT layer 7. In the multilayer film 7, a differential value D obtained by subtracting a total value of values each obtained by multiplying a density and thickness of a film having a slower acoustic velocity than a transverse wave acoustic velocity of the LT layer 7 from a total value of values each obtained by multiplying a density and thickness of a film having a faster acoustic velocity than the transverse wave acoustic velocity of the LT layer 7 is negative, and a thickness of the LT layer 7 is less than 2p where a pitch of electrode fingers in the IDT electrode 19 is “p”.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.