Semiconductor device and method for forming a semiconductor device
US11366031B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 2, 2017 |
| Grant date | Jun 21, 2022 |
| Priority date | — |
| Expiry date | Oct 25, 2038 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81B2203/0127
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
In an embodiment, a semiconductor device includes a substrate body, an environmental sensor, a cap body and a volume of gas, wherein the environmental sensor and the volume of gas are arranged between the substrate body and the cap body in a vertical direction which is perpendicular to a main plane of extension of the substrate body, wherein at least one channel between the substrate body and the cap body connects the volume of gas with an environment of the semiconductor device such that the channel is permeable for gases, and wherein a thickness of the substrate body amounts to at least 80% of a thickness of the cap body and at most 120% of the thickness of the cap body.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.