Manufacturing method of semiconductor device
US11367624B2 · kind B2 · utility
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19Claims
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Key dates
| Filing date | Mar 2, 2020 |
| Grant date | Jun 21, 2022 |
| Priority date | — |
| Expiry date | Mar 2, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/27
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a method of manufacturing a semiconductor device includes forming a first film on a substrate. The method further includes forming a second film on the first film. The method further includes forming a recess in the first film using the second film as a mask. The second film includes a first layer having carbon and a second layer having carbon formed on the first layer. The second layer has a second carbon density lower than a first carbon density of the first layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.