Semiconductor device
US11367651B2 · kind B2 · utility
1Cited by
3References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 16, 2020 |
| Grant date | Jun 21, 2022 |
| Priority date | — |
| Expiry date | Jun 16, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/5283
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a first interlayer insulating film; a conductive connection structure provided in the first interlayer insulating film; a second interlayer insulating film provided on the first interlayer insulating film; a wiring structure provided in the second interlayer insulating film and connected to the conductive connection structure; and an insertion liner interposed between an upper surface of the conductive connection structure and the wiring structure, the insertion liner including carbon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.