Thin film transistor, fabricating method thereof, and display apparatus
US11367792B2 · kind B2 · utility
0Cited by
4References
17Claims
0Family size
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Key dates
| Filing date | Nov 1, 2019 |
| Grant date | Jun 21, 2022 |
| Priority date | — |
| Expiry date | Nov 1, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/126
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure is related to a thin film transistor. The thin film transistor may include an active layer; a gate insulating layer on the active layer; and a gate and a plurality of metal films on the gate insulating layer. The plurality of metal films may be spaced apart from the gate, and insulated from the gate and the active layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.